BAS28 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 22 July 2010 5 of 12
NXP Semiconductors
BAS28
High-speed double diode
VR
=VRmax
(1) VR
= 75 V; maximum values
(2) VR
= 75 V; typical values
(3) VR
= 25 V; typical values
f=1MHz; Tj
=25°C
Fig 3. Reverse current as a function of junction
temperature
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
Fig 5. Forward current as a function of ambient temperature; derating curve
105
104
100
200
mga884
100
Tj (°C)
IR
(nA)
103
102
(2)
(1)
(3)
0
08164
12
VR
(V)
0.8
0.6
0.4
0.2
mbg446
Cd
(pF)
0
0 50 100 200150
Tamb
(
°C)
250
200
msa562
150
100
50
IF
(mA)
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